Electrical properties of Pd-Au/(In-x-Sn1-x) Oxide/Si(p)/Al heterojunction diodes

Current-voltage (I-V) and capacitance-voltage (C-2-V) characteristics of [P d-Au/(In-x-Sn (l-x)) Oxide/Si(p)/Al] semiconductor oxide semiconductor (SOS ) solar cells were measured in the temperature range between 300 and 500 K. The dark forward current-voltage curves were found to be independent of te mperature. Consequently, the diode quality factor was temperature dependent . Analysis of the data indicated that the predominant carrier transport mec hanism of the samples in the intermediate bias voltage region was thermioni c field emission and recombination tunneling. From the experimental data it was found that, the open circuit voltage V-oc approximate to 0.05-0.54 vol t, the short circuit current I-sc approximate to 3.85-5.6 mA and the fill f actor similar to0.28-0.32, under illumination of 1124 lux. (C) 2001 Kluwer Academic Publishers.