Growth and characterization of Zn1-xMgxS thin films for electroluminescentapplications

Authors
Citation
Mk. Jayaraj, Growth and characterization of Zn1-xMgxS thin films for electroluminescentapplications, J MAT S-M E, 12(12), 2001, pp. 733-737
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
12
Issue
12
Year of publication
2001
Pages
733 - 737
Database
ISI
SICI code
0957-4522(2001)12:12<733:GACOZT>2.0.ZU;2-D
Abstract
Zn1-xMgxS:Mn thin films (x=0-0.30) were prepared by thermal co-evaporation of ZnS, Mg and Mn. The structural investigation shows the solid solution is formed in the Mg composition range x=0-0.25 and phase segregation occurs a t higher Mg composition (x > 0.25). The optical band gap shows an increase with increase of Mg composition. The electroluminescent emission correspond ing to the transition Mn2+ ion shows a blue shift with increase of Mg compo sition in the film. Zn1-xMgxS:Mn films could be used as an active layer in a.c. thin film electroluminescent (ACTFEL) devices for obtaining green emis sion color. (C) 2001 Kluwer Academic Publishers.