Study on the characteristics of TiAlN thin film deposited by atomic layer deposition method

The microstructural characteristics and electrical and chemical properties of TiAIN films deposited by the atomic layer deposition (ALD) method were i nvestigated. The growth rate of TiAIN film was measured to be 1.67 Angstrom /cycle. TiAlN film deposited by ALD has a Bl (NaCl) structure with a latti ce parameter of 4.20 Angstrom. The chlorine content in TiAIN film was below the detection limit of Auger electron spectroscopy. TiAlN film showed the columnar structure with a resistivity of about 400 mu Omega cm. The sheet r esistance increased abruptly after annealing at 650 degreesC due to the for mation of a high resistivity Cu-silicide phase at the interface between the TiAIN and Si substrate. The failure of the ALD TiAlN barrier layer was obs erved by an etch-pit test after annealing at 600 degreesC for 1 h. TiAIN fi lms deposited by the ALD method exhibited excellent film properties and imp roved barrier characteristics compared to other chemical vapor deposition m ethods. (C) 2001 American Vacuum Society.