Deposition of diamond films at low pressure in a planar large-area microwave surface wave plasma source

In this study a planar large-area microwave plasma source is used to grow d iamond films at low gas pressure. This plasma source is based on the excita tion of plasma surface waves so that overdense plasmas can be generated. Ab ove all, this plasma source is easy to scale up. For admixture of CH4/H-2 g as, radical information and characteristics of the plasma are carefully cha racterized at low pressure. Some features different from those at high pres sure are observed. A three-step process for diamond growth in the planar mi crowave plasma chemical vapor deposition system has been developed. High nu cleation density can be achieved as a result. At a low pressure of 0.2 Torr , diamond films can be successfully deposited on a 4-in. Si(100) wafer, exh ibiting a large amount of non-sp(3) bonding. The effects of plasma properti es on the diamond film are addressed. (C) 2001 American Vacuum Society.