Fabrication and characterization of C implantation standards for Si1-x-yGexCy alloys

Known amounts of carbon were implanted into a set of Si1-xGex alloy films ( 0 <x <0.35) to provide quantification standards for C composition measureme nts of Si1-x-yGexCy alloys by secondary ion mass spectrometry. The implante d doses were fixed to within +/-2%, the thicknesses of implanted films were measured to within +/-1% using high-resolution electron microscopy, and th e Ge concentrations were determined to within +/-0.5% using Rutherford back scattering spectroscopy. For Si:Ge ratios in the ran ge Si66Ge34 to Si91Ge9 , the relative sensitivity factor for carbon with respect to silicon, and f or carbon relative to germanium, both decreased substantially with increasi ng Ge content. (C) 2001 American Vacuum Society.