ELECTRICAL-ACTIVITY OF FRANK PARTIAL DISLOCATIONS AND THE INFLUENCE OF METALLIC IMPURITIES IN CZOCHRALSKI-GROWN SILICON

Authors
SHEN B YANG K CHEN PG ZHANG RG SHI Y ZHENG YD SEKIGUCHI T SUMINO K
Citation
B. Shen et al., ELECTRICAL-ACTIVITY OF FRANK PARTIAL DISLOCATIONS AND THE INFLUENCE OF METALLIC IMPURITIES IN CZOCHRALSKI-GROWN SILICON, Chinese Physics Letters, 14(6), 1997, pp. 436-439
Citations number
10
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
14
Issue
6
Year of publication
1997
Pages
436 - 439
Database
ISI
SICI code
0256-307X(1997)14:6<436:EOFPDA>2.0.ZU;2-Y
Abstract
Electrical activity of Frank partial dislocations bounding stacking fa ults and the influence of Fe impurities in Czochralski-grown silicon a re investigated by means of the electron-beam-induced-current(EBIC) te chnique. Frank partials free from metallic impurities exhibit EBIC con trast at low temperatures but not at room temperature, indicating that they are only accompanied with shallow energy levels in the band gap. The energy level related to a Frank partial is determined to be about E-c - 0.08 eV in n-type Si. Frank partials decorated by Fe impurities become EBIC active st room temperature.