EFFECT OF INTERFACE ROUGHNESS ON RESONANT-TUNNELING IN DOUBLE-BARRIERHETEROSTRUCTURES

Citation
T. Figielski et al., EFFECT OF INTERFACE ROUGHNESS ON RESONANT-TUNNELING IN DOUBLE-BARRIERHETEROSTRUCTURES, Acta Physica Polonica. A, 90(4), 1996, pp. 777-780
Citations number
7
Categorie Soggetti
Physics
Journal title
ISSN journal
05874246
Volume
90
Issue
4
Year of publication
1996
Pages
777 - 780
Database
ISI
SICI code
0587-4246(1996)90:4<777:EOIROR>2.0.ZU;2-M
Abstract
We argue that the well-boundary roughness in a double-barrier heterost ructure induces subsidiary subbands in the quantum well which, in turn , lead to the appearance of a broad shoulder beyond the principal reso nance peak in tile current-voltage characteristics.