T. Figielski et al., EFFECT OF INTERFACE ROUGHNESS ON RESONANT-TUNNELING IN DOUBLE-BARRIERHETEROSTRUCTURES, Acta Physica Polonica. A, 90(4), 1996, pp. 777-780
We argue that the well-boundary roughness in a double-barrier heterost
ructure induces subsidiary subbands in the quantum well which, in turn
, lead to the appearance of a broad shoulder beyond the principal reso
nance peak in tile current-voltage characteristics.