Multi-aperture extraction system with micro-beamlet switching capability

A novel ion projection lithography (IPL) technique called maskless-micro-be am reduction lithography (MMRL) is being developed at the Lawrence Berkeley National Laboratory. Instead of a thin stencil mask, this new ion projecti on lithography scheme utilizes a thicker universal pattern generator (or be am forming electrode) which contains switchable beamlets. Both single apert ure and nine-aperture beam extraction systems have been used to test the sw itching scheme. In the single aperture case, an ion beam current of 23 nA w as extracted and successfully turned off when a positive voltage was applie d on the second electrode. For the nine-hole system, ion beams were switche d on and off selectively and independently from each other, It has been dem onstrated that electron beam switching can be achieved in a similar manner. (C) 2001 Elsevier Science B.V. All rights reserved.