Temperature-induced metallization of the Si(100) surface - art. no. 201304

Authors
Hwang, CC Kang, TH Kim, KJ Kim, B Chung, Y Park, CY
Citation
Cc. Hwang et al., Temperature-induced metallization of the Si(100) surface - art. no. 201304, PHYS REV B, 6420(20), 2001, pp. 1304
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6420
Issue
20
Year of publication
2001
Database
ISI
SICI code
0163-1829(20011115)6420:20<1304:TMOTSS>2.0.ZU;2-6
Abstract
We provide evidence for the temperature-induced metallization (TIM) of Si(1 00) surface. A TIM takes place at about 600 K without any change in surface periodicity. Contrary to previous suggestions, photoemission spectroscopy (PES) reveals that the TIM is not related to the (instantaneous) symmetriza tion of asymmetric dimers. We suggest that Si adatoms produced at elevated temperatures play a role of donor, giving rise to the TIM.