Direct experimental evidence of insensitivity of local Schottky barriers to lateral chemical inhomogeneity in case studies of metal/GaN(0001) interfaces - art. no. 201312

Authors
Barinov, A Gregoratti, L Kiskinova, M
Citation
A. Barinov et al., Direct experimental evidence of insensitivity of local Schottky barriers to lateral chemical inhomogeneity in case studies of metal/GaN(0001) interfaces - art. no. 201312, PHYS REV B, 6420(20), 2001, pp. 1312
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6420
Issue
20
Year of publication
2001
Database
ISI
SICI code
0163-1829(20011115)6420:20<1312:DEEOIO>2.0.ZU;2-I
Abstract
The response of local Schottky barriers (SB) to local specifics of the inte rface is readdressed by photoelectron microscopy investigations of metal/Ga N interfaces, which reveal that compositional and morphological inhomogenei ties have no effect on local SB heights. This unexpected behavior is ascrib ed to lateral charge redistribution between different interface regions lea ding to homogenization of the SB fluctuations at the semiconductor surface in contact with the metallic layer.