During organo-metallic vapor phase epitaxy (OMVPE) of GaInP (001) layers, t
he structure of the growth surface has a profound influence on the microstr
ucture, and the optical and electrical properties of the resulting bulk mat
erial. The beta2 (2 x 4) surface, terminated with P dimers, provides a ther
modynamic driving force for CuPtB ordering. Recently, surfactants such as S
b have been used to reduce this driving force. The use of surfactants to co
ntrol the surface structure during growth has allowed for band-gap tailorin
g and the fabrication of heterostructures with no change in solid compositi
on across the interface. Another exciting discovery was that high coverages
of Sb induced a bulk triple period ordering. To further our understanding
of these phenomena, the P terminated GaP(001) surface was studied via first
principles calculations based on the Kohn-Sham density functional theory w
ithin the local density approximation (LDA). It was determined that under i
ncreasingly P-rich conditions, the beta2(2x4) and then the c(4x4) reconstru
ctions are stable. When the surface is covered with Sb, several different r
econstructions are found to be stable in the allowable range of chemical po
tentials. Under lower group-V coverages the beta2 (2x4) is stable, while at
high Sb coverage, (4x3) and (2x3) reconstructions are stable. We propose t
hat these (x3) reconstructions explain the triple period ordering seen in G
aInP grown with Sb as a surfactant. Total-energy calculations confirm that
(x3) reconstructions provide a thermodynamic driving force for A-variant tr
iple period ordering.