Backward diode composed of a metallic and semiconducting nanotube - art. no. 201404

The conditions necessary for a nanotube junction connecting a metallic and semiconducting nanotube to rectify the current are theoretically investigat ed. A tight binding model is used for the analysis, which includes the Hart ree-Fock approximation and Green's function method. It is found that the ju nction has a behavior similar to the backward diode if the gate electrode i s located nearby and the Fermi level of the semiconducting tube is near the gap. Such a junction would be advantageous since the length required for r ectification could be reduced.