Phonon-induced photoconductive response in doped semiconductors - art. no.205203

Authors
Jin, KJ Zhang, JD Chen, ZH Yang, GZ Chen, ZH Shi, XH Shen, SC
Citation
Kj. Jin et al., Phonon-induced photoconductive response in doped semiconductors - art. no.205203, PHYS REV B, 6420(20), 2001, pp. 5203
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6420
Issue
20
Year of publication
2001
Database
ISI
SICI code
0163-1829(20011115)6420:20<5203:PPRIDS>2.0.ZU;2-#
Abstract
We present an unusual photoconductive response in doped GaAs and InP semico nductor epitaxial layers and demonstrate that such a response is due to the longitudinal optic (LO) phonon-induced Fano resonance instead of the tradi tional kinetic mechanism. Theoretical calculations based upon the present m echanism are in excellent agreement with the experimental results and the d eveloped formalism should be universally applicable to the related photocon ductive processes of other doped semiconductors.