T. Balasubramanian et al., Surface electronic band structure and (A)over-bar surface state lifetimes at the Be(10(1)over-bar-0) surface: Experiment and theory - art. no. 205401, PHYS REV B, 6420(20), 2001, pp. 5401
The surface electronic band structure of the Be(10(1) over bar 0) surface i
s experimentally determined by angle-resolved photoemission and calculated
by using density-functional theory. The experimental results agree well wit
h the calculations, except for the fact that we were only able to resolve t
hree surface states in the gap at (L) over bar, instead of four as predicte
d by the calculations. Through the temperature-dependent study, the phonon
contribution subtracted width (h times inverse lifetime) of the shallow sur
face state at (A) over bar is found to be 51 +/- 8 meV. This is compared wi
th the electron-electron interaction contribution to the width (53 meV) of
the shallow surface state at A obtained from model potential calculations.