Kh. Chow et al., Muonium analog of hydrogen passivation: Observation of the Mu(+)-Zn- reaction in GaAs - art. no. 216403, PHYS REV L, 8721(21), 2001, pp. 6403
We report direct detection of the formation and subsequent breakup of a com
plex containing positively charged muonium (Mu(+)) and a substitutional Zn-
Ga acceptor in heavily doped p-type GaAs:Zn. Mu(+) diffuses above 200 K wit
h a hop rate v = v(0)e(-Ev/kBT) where v(0) = (7.7 +/- 2.0) x 10(8) s(-1) an
d E-v = 0.15(4) eV. Above 350 K, it forms the complex with a trapping radiu
s of 500 +/- 200 Angstrom. The Mu-Zn complex breaks up above 550 K with a d
issociation energy of 0.88(7) eV and prefactor of (5 +/- 4) x 10(12) s(-1).
Above 750 K, the cyclic reaction Mu(+) <----> Mu(0) takes place.