Muonium analog of hydrogen passivation: Observation of the Mu(+)-Zn- reaction in GaAs - art. no. 216403

Citation
Kh. Chow et al., Muonium analog of hydrogen passivation: Observation of the Mu(+)-Zn- reaction in GaAs - art. no. 216403, PHYS REV L, 8721(21), 2001, pp. 6403
Citations number
20
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
8721
Issue
21
Year of publication
2001
Database
ISI
SICI code
0031-9007(20011119)8721:21<6403:MAOHPO>2.0.ZU;2-R
Abstract
We report direct detection of the formation and subsequent breakup of a com plex containing positively charged muonium (Mu(+)) and a substitutional Zn- Ga acceptor in heavily doped p-type GaAs:Zn. Mu(+) diffuses above 200 K wit h a hop rate v = v(0)e(-Ev/kBT) where v(0) = (7.7 +/- 2.0) x 10(8) s(-1) an d E-v = 0.15(4) eV. Above 350 K, it forms the complex with a trapping radiu s of 500 +/- 200 Angstrom. The Mu-Zn complex breaks up above 550 K with a d issociation energy of 0.88(7) eV and prefactor of (5 +/- 4) x 10(12) s(-1). Above 750 K, the cyclic reaction Mu(+) <----> Mu(0) takes place.