Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model - art. no. 216808

Resonant transport is demonstrated in a hybrid superconductor-semiconductor heterostructure junction grown by molecular beam epitaxy on GaAs. This het erostructure realizes the model system introduced by de Gennes and Saint-Ja mes in 1963 [P. G. de Gennes and D. Saint-James, Phys. Lett. 4, 151 (1963)] . At low temperatures a single marked resonance peak is shown superimposed to the characteristic Andreev-dominated subgap conductance. The observed ma gnetotransport properties are successfully analyzed within the random matri x theory of quantum transport, and ballistic effects are included by direct ly solving the Bogoliubov-de Gennes equations.