OPTICAL-PROPERTIES OF GAN EPILAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY ON ALN BUFFER LAYER ON (111)SI

Authors
GODLEWSKI M BERGMAN JP MONEMAR B ROSSNER U BARSKI A
Citation
M. Godlewski et al., OPTICAL-PROPERTIES OF GAN EPILAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY ON ALN BUFFER LAYER ON (111)SI, Acta Physica Polonica. A, 90(4), 1996, pp. 789-792
Citations number
10
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
90
Issue
4
Year of publication
1996
Pages
789 - 792
Database
ISI
SICI code
0587-4246(1996)90:4<789:OOGEGB>2.0.ZU;2-U
Abstract
Optical properties of GaN/AlN/Si (111) epilayers grown by MBE are stud ied. The observed decay transients of excitonic emissions and their te mperature dependence is explained by an efficient transfer link betwee n bound and free excitons.