Interaction of hydrogen with radiation defects in p-Si crystals

Interaction of hydrogen with radiation defects in p-Si crystals was studied by deep-level transient spectroscopy. Hydrogen was introduced into the ele ctron-irradiated crystals using wet chemical etching in a solution of nitri c and hydrofluoric acids at room temperature with subsequent annealing at 3 80 K under reverse bias applied to the formed Schottky diodes. It is found that the passivation of radiation defects is accompanied with the formation of new electrically active centers with the concentration profile dependen t on the hydrogen concentration. It is shown for the first time that hydrog en passivates the electrical activity of the CsCi centers. Based on the dat a about the spatial distribution of defects and the kinetics of passivation , the plausible origin of the newly formed centers is analyzed. The radii o f hydrogen capture by divacancies, the K centers, the CsCi complexes, and n ew centers were determined. (C) 2001 MAIK "Nauka/Interperiodica".