Citation
Mf. Galyautdinov et al., Dynamics of nonequilibrium gratings induced in silicon films by femtosecond laser pulses, SEMICONDUCT, 35(12), 2001, pp. 1366-1368
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826
→ ACNP
Volume
35
Issue
12
Year of publication
2001
Pages
1366 - 1368
Database
ISI
SICI code
1063-7826(2001)35:12<1366:DONGII>2.0.ZU;2-I
Abstract
Relaxation of the dynamic gratings formed by nonequilibrium charge carriers
in thin single-crystal silicon films during femtosecond laser excitation w
as studied. The case of the ultimate concentration of carriers (N approxima
te to 10(21) cm(-3)) is considered. Ambipolar diffusion and Auger recombina
tion contributions to the grating decay are estimated. The observation of a
long-lived grating at pump intensity above 5 x 10(11) W/cm(2) is reported.
(C) 2001 MAIK "Nauka/Interperiodica".