Radiative recombination via direct optical transitions in In1-xGaxAs (0 <=x <= 0.16) solid solutions

Authors
Aidaraliev, M Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus', NM Talalakin, GN
Citation
M. Aidaraliev et al., Radiative recombination via direct optical transitions in In1-xGaxAs (0 <=x <= 0.16) solid solutions, SEMICONDUCT, 35(12), 2001, pp. 1369-1371
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
12
Year of publication
2001
Pages
1369 - 1371
Database
ISI
SICI code
1063-7826(2001)35:12<1369:RRVDOT>2.0.ZU;2-S
Abstract
Photoluminescence from In1 - xGaxAs (0 less than or equal to x less than or equal to 0.16) solid solution epilayers LPE-grown on (111)InAs substrates and electroluminescence from p-n junctions on their bases have been studied in the temperature range 77-450 K. Despite the negative lattice mismatch b etween epilayer and substrate, radiative recombination in epilayers occurs via direct optical transitions ensuring a high internal quantum efficiency of luminescence (6% at 295 K). (C) 2001 MAIK "Nauka/Interperiodica".