Effect of structural imperfection on the spectrum of deep levels in 6H-SiC

Authors
Lebedev, AA Davydov, DV Tregubova, AS Bogdanova, EV Shcheglov, MP Pavlenko, MV
Citation
Aa. Lebedev et al., Effect of structural imperfection on the spectrum of deep levels in 6H-SiC, SEMICONDUCT, 35(12), 2001, pp. 1372-1374
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
12
Year of publication
2001
Pages
1372 - 1374
Database
ISI
SICI code
1063-7826(2001)35:12<1372:EOSIOT>2.0.ZU;2-5
Abstract
Spectra of deep centers in a lightly doped 6H-SiC substrate having regions with different degrees of structural perfection were investigated. It is fo und that the concentrations of the majority of deep centers are independent of the dislocation density in a given region of the sample. The obtained r esults and published data lead to the conclusion that the concentration of silicon vacancies is independent of the degree of the structural perfection of 6H-SiC. (C) 2001 MAIK "Nauka/Interperiodica".