The contact of metal with silicon carbide: Schottky barrier height in relation to SiC polytype

Authors
Davydov, SY Lebedev, AA Posrednik, OV Tairov, YM
Citation
Sy. Davydov et al., The contact of metal with silicon carbide: Schottky barrier height in relation to SiC polytype, SEMICONDUCT, 35(12), 2001, pp. 1375-1377
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
12
Year of publication
2001
Pages
1375 - 1377
Database
ISI
SICI code
1063-7826(2001)35:12<1375:TCOMWS>2.0.ZU;2-A
Abstract
The results obtained in measuring the Schottky barrier height Phi (n)(b) fo r a chromium contact with 8H-, 6H-, 15R-, 27R- and 4H-SiC silicon carbide p olytypes with n-type conduction are analyzed in terms of a simple model. It is shown that the Phi (n)(b) value is proportional to the concentration of silicon vacancies in the polytypes. The results of Phi (n)(b) measurements for palladium and platinum contacts to silicon carbide polytypes are discu ssed. (C) 2001 MAIK "Nauka/Interperiodica".