InAsSb/InAsSbP double-heterostructure lasers emitting in the 3-4 mu m spectral range

Citation
Tn. Danilova et al., InAsSb/InAsSbP double-heterostructure lasers emitting in the 3-4 mu m spectral range, SEMICONDUCT, 35(12), 2001, pp. 1404-1417
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
12
Year of publication
2001
Pages
1404 - 1417
Database
ISI
SICI code
1063-7826(2001)35:12<1404:IDLEIT>2.0.ZU;2-3
Abstract
Our earlier reports concerning the fabrication by liquid-phase epitaxy and investigation of InAsSbP/InAsSb/InAsSbP double heterostructure lasers emitt ing at 3-4 mum are reviewed. The dependences of spectral characteristics an d the spatial distribution of the laser emission on temperature and current are discussed. Lasing modes are shifted by 0.5-1.0 cm(-1) to longer wavele ngths with increasing temperature. The tuning of the lasing modes by means of current is very fast (10(-8)-10(-12) s). With increasing current, the mo des are shifted to shorter wavelengths by 50-60 Angstrom at 77 K. The maxim um mode shift of 104 Angstrom (10 cm(-1)) is observed at 62 K. The spectral line width of the laser is as narrow as 10 MHz. Abnormally narrow directio nal patterns in the p-n junction plane are observed in some cases in the sp atial distribution of laser emission. The current tuning of lasers, due to nonlinear optical effects, has been modeled mathematically in good agreemen t with the experiment. Transmittance spectra of OCS, NH3, H2O, CH3Cl, and N 2O gases were recorded using current-tuned lasers. (C) 2001 MAIK "Nauka/Int erperiodica".