Coexistence of excitonic lasing with electron-hole plasma spontaneous emission in one-dimensional semiconductor structures

Citation
J. Rubio et al., Coexistence of excitonic lasing with electron-hole plasma spontaneous emission in one-dimensional semiconductor structures, SOL ST COMM, 120(11), 2001, pp. 423-427
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
120
Issue
11
Year of publication
2001
Pages
423 - 427
Database
ISI
SICI code
0038-1098(2001)120:11<423:COELWE>2.0.ZU;2-W
Abstract
We report that excitonic lacing gaits coexists with spontaneous optical emi ssion characteristic of an electron-hole plasma in highly photoexcited one- dimensional semiconductors. The experiments probe quantum T-wire laser stru ctures optimized for high photoexcitation. Evidence of dense electron-hole plasma is clearly seen in the spontaneous recombination measured when lacin g emission displays distinct excitonic character. These findings differ str ikingly from those in higher dimentional semiconductors, and offer insights on optical processes considered by recent theories of dense electron-hole plasmas. (C) 2001 Published by Elsevier Science Ltd.