Structural effect on electronic sputtering of hydrogenated amorphous carbon films

Citation
S. Ghosh et al., Structural effect on electronic sputtering of hydrogenated amorphous carbon films, SOL ST COMM, 120(11), 2001, pp. 445-450
Citations number
39
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
120
Issue
11
Year of publication
2001
Pages
445 - 450
Database
ISI
SICI code
0038-1098(2001)120:11<445:SEOESO>2.0.ZU;2-N
Abstract
A large erosion (similar to 10(5) atoms/ion) of C and H from hydrogenated a morphous carbon films (a-C:H) is observed due to the bombardment of 150 MeV Ag13+ ions. The erosion rate is monitored on-line by elastic recoil detect ion analysis (ERDA) technique. From the set of four samples under study, tw o films show erosion of both C and H, whereas, only H depletion takes place from the other two films. The observed variation in sputtering yield in di fferent films is explained on the basis of structure and chemical environme nt of the films. It is shown in the framework of thermal spike model that t he thermal energy confinement due to smaller cluster or domain sizes of the film influences the erosion. Structure of the films is revealed by Raman s pectroscopy and is discussed on the basis of their Raman G and D modes. (C) 2001 Elsevier Science Ltd. All rights reserved.