Yy. Song et al., Vibrational spectra of crystalline tetrakis(trimethylsilyl) silane(IV), Si[Si(CH3)(3)](4), at high pressures, VIB SPECTR, 27(2), 2001, pp. 127-134
Infrared and Raman spectra of crystalline tetrakis(trimethylsilyl)silane(IV
), Si[Si(CH3)(3)](4) (TTMSS), have been recorded at various pressures rangi
ng from ambient to similar to 55 kbar with the aid of diamond-anvil cell (D
AC). The vibrational data strongly suggest the occurrence of a phase transi
tion at about 2-3 kbar, which appears to be associated mainly with a change
in the rearrangement of the trimethylsilyl groups. The tetrahedral Si-Si-4
skeleton itself is not greatly affected by the application of high pressur
es. The v(C-H) and v(Si-C) modes of the attached trimethylsilyl groups are,
however, particularly sensitive to pressure and exhibit significant change
s in their pressure dependences (dv/dp) in both the lR and Raman spectra. T
he observed pressure dependences range from -0.61 to 2.28 cm(-1) kbar(-1).
Differential scanning calorimetric measurements also indicate the occurrenc
e of the phase transition fairly close to room temperature (-37.6 degreesC)
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