Large magnetoresistance and field-induced transitions in Ni1-xS

Authors
Citation
P. Chen et Yw. Du, Large magnetoresistance and field-induced transitions in Ni1-xS, APPL PHYS A, 74(1), 2002, pp. 105-107
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
74
Issue
1
Year of publication
2002
Pages
105 - 107
Database
ISI
SICI code
0947-8396(200201)74:1<105:LMAFTI>2.0.ZU;2-I
Abstract
Large magnetoresistance (MR) has been observed in Ni1-xS (x = -0.02, -0.01, 0, 0.01, 0.02 and 0.03). The MR in a magnetic field of 4 T was found to be equal to 770% at 290 K for x = -0.02, 920% at 283 K for x = -0.01, 1530% a t 268 K for x = 0, 1040% at 230 K for x = 0.01, 730% at 257 K for x = 0.02 and 660% at 87 K for x = 0.03. The large MR was found to be due to a magnet ic field-induced magnetic and electrical transition from an antiferromagnet ic (AFM) anomalous-metal phase to a paramagnetic (PM) metal phase.