The role of sample rotation and oblique ion incidence on quantum-dot formation by ion sputtering

Authors
Citation
R. Frost, The role of sample rotation and oblique ion incidence on quantum-dot formation by ion sputtering, APPL PHYS A, 74(1), 2002, pp. 131-133
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
74
Issue
1
Year of publication
2002
Pages
131 - 133
Database
ISI
SICI code
0947-8396(200201)74:1<131:TROSRA>2.0.ZU;2-0
Abstract
Starting from a theory recently proposed by Kahng et al. that explains the formation of ordered dots by ion sputtering under normal ion incidence, it was demonstrated that extending this theory to ion sputtering under oblique ion incidence with simultaneous sample rotation offers the self-organized formation of dots by ion sputtering for a large variety of different ion/ma terial combinations. While for sputtering under normal incidence the shape of the collision cascade must be anisotropic, where the lateral straggling exceeds the longitudinal straggling, this constraint is not necessary under oblique incidence.