CD1-XFEXSE FE INTERFACE FORMATION OBSERVED BY MEANS OF PHOTOEMISSION SPECTROSCOPY/

We present a new outlook at the study of metal-semiconductor interface formation. A resonant photoemission spectroscopy tuned to the Fe 3p-3 d transition (56 eV) was used to investigate the changes after sequent ial deposition of Fe atoms on freshly cleaved Cd0.86Fe0.14Se crystal s urface. In the first stages (0.6-4 ML) of Fe deposition the contributi on of Fe 3d electrons to tile valence band grows up markedly indicatin g tile increase in Fe content in the Cd0.86Fe0.14Se crystal surface re gion. When the amount of Fe exceed 40 ML the resonant photoemission sp ectra became similar to the Fe metal with some contribution of the ter nary crystal substrate.