Metallo-organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications

Authors
Chatterjee, S Samanta, SK Banerjee, HD Maiti, CK
Citation
S. Chatterjee et al., Metallo-organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications, B MATER SCI, 24(6), 2001, pp. 579-582
Citations number
10
Categorie Soggetti
Material Science & Engineering
Journal title
BULLETIN OF MATERIALS SCIENCE
ISSN journal
02504707 → ACNP
Volume
24
Issue
6
Year of publication
2001
Pages
579 - 582
Database
ISI
SICI code
0250-4707(200112)24:6<579:MCPECO>2.0.ZU;2-F
Abstract
ZrO2 films on silicon wafer were deposited by microwave plasma enhanced che mical vapour deposition technique using zirconium tetratert butoxide (ZTB). The structure and composition of the deposited layers were studied by four ier transform infrared spectroscopy (FTIR). The deposition rates were also studied. MOS capacitors fabricated using deposited oxides were used to char acterize the electrical properties of ZrO2 films. The films showed their su itability for microelectronic applications.