Interfacial development and microstructural imperfection of multilayer ceramic chips with Ag/Pd electrodes

Citation
Rz. Zuo et al., Interfacial development and microstructural imperfection of multilayer ceramic chips with Ag/Pd electrodes, CERAM INT, 27(8), 2001, pp. 889-893
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CERAMICS INTERNATIONAL
ISSN journal
02728842 → ACNP
Volume
27
Issue
8
Year of publication
2001
Pages
889 - 893
Database
ISI
SICI code
0272-8842(2001)27:8<889:IDAMIO>2.0.ZU;2-6
Abstract
The interfacial microstructure between Ag/Pd electrodes and PMN-PZN-PT rela xor ferroelectric ceramics in cofired multilayer ceramic devices was invest igated by transmission electron microscopy and scanning electron microscopy . Disadvantageous interfacial defects, such as delaminations, warping, gas holes and exaggerated grain growth, were identified. In addition to the pre paration process, the composition of the inner electrode paste and the sint ering densification compatibility between the layers played important roles in the interfacial development. The relationship of the interfacial micros tructure to the reliability of the device is discussed. (C) 2001 Elsevier S cience Ltd and Techna S.r.l. All rights reserved.