Highly conductive Nb-doped BaTiO3 epitaxial thin films grown by laser molecular beam epitaxy

The n-type conductive BaNb0.3Ti0.7O3 thin films were grown on SrTiO3(001) s ubstrates by computer-controlled laser molecular beam epitaxy. The BaNb0.3T i0.7O3 films with (001) orientation are epitaxially grown on SrTiO3 substra tes, as confirmed by x-ray diffraction techniques. The root-mean-square sur face roughness of the deposited thin films is measured to be 0.24 nm by ato mic force microscopy. The resistivity, carrier concentration and mobility o f the BaNb0.3Ti0.7O3 thin film are 5.9 x 10(-4) Omega .cm, 1.8 x 10(21)cm(- 3) and 10.7cm(2).V-1.s(-1) at room temperature, respectively, which are the best values in Nb-doped BaTiO3 thin films reported so far to our knowledge .