In this paper we consider the influence of ''mass barrier'' and elasti
c scattering processes on the shape of j(V) and j(B) characteristics.
Two scattering mechanisms, i.e. Coulombic on ionized impurities and on
potential fluctuations in double-barrier structures are considered. T
he ''mass barrier'' shifts the whole j(V) characteristic slightly towa
rds lower voltage and makes the resonant energy ER dependent on magnet
ic field. On the other hand, both considered scattering mechanisms cha
nge the shape of j(V) and j(B) characteristics by shifting the oscilla
tion maxima towards lower applied voltage.