OPTICALLY INDUCED GAPS IN DISORDERED SEMICONDUCTORS

On tile example of an explicitly solvable model of a semiconductor wit h alloy disorder in the conduction band, it is shown that a slowly var ying exciting light pulse can be treated in an adiabatic approximation , that is, the self-energy of an electron can be taken as a continuous ly evolving series of snapshots of sell-energies corresponding to a st eady illumination with tile instantaneous value of the light strength.