Qs. Chen et al., Modeling of heat transfer and kinetics of physical vapor transport growth of silicon carbide crystals, J HEAT TRAN, 123(6), 2001, pp. 1098-1109
Wide-bandgap silicon carbide (SiC) substrates are needed for fabrication of
electronic and optoelectronic devices and circuits that can function under
high temperature, high-power high-frequency conditions. The bulk growth of
SiC single crystal by physical vapor transport (PVT), modified Lely method
involves sublimation of a SiC powder charge, mass transfer through an iner
t gas environment, and condensation on a seed. Temperature distribution in
the growth system and growth rate profile on the crystal surface are critic
al to the quality and size of the grown SiC single crystal. Modeling of SiC
growth is considered important for the design of efficient systems and red
uction of defect density and micropipes in as-grown crystals. A comprehensi
ve process model for SiC bulk growth has been developed that incorporates t
he calculations of radio frequency (RF) heating, heat and mass transfer and
growth kinetics. The effects of current in the induction coil as well as t
hat of coil position on thermal field and growth rate have been studied in
detail. The growth rate has an Arrhenius-type dependence on deposition surf
ace temperature and a linear dependence on the temperature gradient in the
growth chamber.