The influences of O-2 partial pressure on saturation magnetization, coerciv
ity and effective permeability of the as-deposited Fe-Sm-O thin films, whic
h were fabricated by RF magnetron reactive sputtering method, were investig
ated. The nanocrystalline Fe-83 4Sm3.4O13.2 thin film fabricated at O-2 par
tial pressure of 5% exhibited the best magnetic softness with a saturation
magnetization of 1.43 MA/m, coercivity of 65.2 A/m and effective permeabili
ty of about 2600 in the frequency range from 0.5 to 100 MHz. The electrical
resistivity of Fe-83 4Sm3.4O13.2 was 13 mu Omega cm. The microstructures a
nd electrical resistivity were investigated in this work. (C) 2001 Elsevier
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