The fabrication and reliability of a solder wafer-to-wafer bonding process
is discussed. Using a solder reflow process allows vacuum packaging to be a
ccomplished with unplanarized complementary metal-oxide semiconductor (CMOS
) surface topography. This capability enables standard CMOS processes, and
integrated microelectromechanical systems devices to be packaged at the chi
p-level. Alloy variations give this process the ability to bond at lower te
mperatures than most alternatives. Factors affecting hermeticity, shorts, Q
values, shifting cavity pressure, wafer saw cleanliness and corrosion resi
stance will be covered.