LOW-THRESHOLD ROOM-TEMPERATURE ALGAAS GAAS GRIN SCH SQW LASERS GROWN BY MBE/

Authors
KANIEWSKA M REGINSKI K MUSZALSKI J KRYNSKA D LITKOWIEC A KANIEWSKI J WESOLOWSKI M BUGAJSKI M
Citation
M. Kaniewska et al., LOW-THRESHOLD ROOM-TEMPERATURE ALGAAS GAAS GRIN SCH SQW LASERS GROWN BY MBE/, Acta Physica Polonica. A, 90(4), 1996, pp. 847-850
Citations number
8
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
90
Issue
4
Year of publication
1996
Pages
847 - 850
Database
ISI
SICI code
0587-4246(1996)90:4<847:LRAGGS>2.0.ZU;2-N
Abstract
Low threshold room temperature AlGaAs/GaAs graded-index separate-confi nement heterostructure single quantum well (GRIN SCH SQW) lasers were prepared by MBE. The influence of the growth temperature on the laser parameters was studied. Due to the high temperature MBE growth and the use of p-contact layer in the form of thin quasi-metallic beryllium l ayer significant reduction of the threshold current was achieved.