Tuning of Au/n-GaAs diodes with highly conjugated molecules

Citation
Dg. Wu et al., Tuning of Au/n-GaAs diodes with highly conjugated molecules, J PHYS CH B, 105(48), 2001, pp. 12011-12018
Citations number
52
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF PHYSICAL CHEMISTRY B
ISSN journal
15206106 → ACNP
Volume
105
Issue
48
Year of publication
2001
Pages
12011 - 12018
Database
ISI
SICI code
1520-6106(200112)105:48<12011:TOADWH>2.0.ZU;2-Q
Abstract
Bifunctional conjugated molecules, consisting of electron donating or accep ting groups that are connected, via a conjugated bridge, to a carboxylic ac id group, were adsorbed as monomolecular carboxylate films on n-GaAs (100) and characterized by reflection FTIR, ellipsometry, and contact angle techn iques. The way the donors and acceptors affected the electronic properties of the semiconductor was investigated. In agreement with theory, we find a linear relation between the calculated dipole moment of the molecules and t he change in electron affinity of the moleculary modified surface, as well as between the barrier height of Au/molecule on n-GaAs junctions, extracted from their current-voltage characteristics and the dipole moment. The expe rimental results show little effect of the nature of the conjugated bridge in the molecules. Comparison with earlier work shows a clear decrease in th e effect of the dipole of the free molecule on the semiconductor surface an d interface behavior, notwithstanding the strongly conjugated link between the donor or acceptor groups of the molecule and the semiconductor surface. The simplest way to understand this is to consider the higher polarizabili ty of the intervening bonds. Such effect needs to be considered in designin g molecules for molecular control over devices.