Electrodeposition in aqueous solution was used to prepare p-ZnCuTe semicond
uctors in thin film form for photovoltaic applications. Formation of the te
rnary compound having the cubic structure of ZnTe was achieved upon anneali
ng at 400 degreesC. The optical characteristics of the film, in terms of op
tical adsorption and energy gap, were found to depend upon the Cu content i
n the film. This latter also influences sheet resistivity and majority carr
ier concentration values.