Synthesis and properties of thin film ZnCuTe semiconductors

Citation
Pl. Antonucci et al., Synthesis and properties of thin film ZnCuTe semiconductors, MATER TECHN, 15(3), 2000, pp. 197-201
Citations number
6
Categorie Soggetti
Material Science & Engineering
Journal title
MATERIALS TECHNOLOGY
ISSN journal
10667857 → ACNP
Volume
15
Issue
3
Year of publication
2000
Pages
197 - 201
Database
ISI
SICI code
1066-7857(200009)15:3<197:SAPOTF>2.0.ZU;2-I
Abstract
Electrodeposition in aqueous solution was used to prepare p-ZnCuTe semicond uctors in thin film form for photovoltaic applications. Formation of the te rnary compound having the cubic structure of ZnTe was achieved upon anneali ng at 400 degreesC. The optical characteristics of the film, in terms of op tical adsorption and energy gap, were found to depend upon the Cu content i n the film. This latter also influences sheet resistivity and majority carr ier concentration values.