Extreme ultraviolet (EUV) sources for lithography based on synchrotron radiation

The study presented here was initiated by a discussion to investigate the p ossibility of using synchrotron radiation as a source for the Next Generati on Lithography (NGL) based on the EUV-concept (Extreme Ultra-Violet; here 1 3.5 or 11.3 mm radiation, respectively). The requirements are: 50 W, 2%, ba ndwidth and minimal power outside this bandwidth. Three options were invest igated. The first two deal with radiation from bending magnets and undulato rs. The results confirm the earlier work by Oxfords Instrument and others t hat these light sources lack in-band power while emitting excessive out-of- band radiation. The third approach is a Free Electron Laser (FEL) driven by a 500 MeV linear accelerator with a superconducting mini-undulator as radi ation emitting device. Such as device would produce in-band EUV-power in ex cess of 50 W with negligible out-of-band power. (C) 2001 Elsevier Science B .V. All rights reserved.