Phase separation of Al1-xInxN grown at the resonance point of nitrogen-ECRplasma

We present a novel method to grow Al1-xInxN by the use of high density acti ve nitrogen species, which are generated at the resonance point of nitrogen -ECR (electron cyclotron resonance) plasma. where metal Al and In are evapo rated onto sapphire c-plane simultaneously. By the use of this method, Al1- xInxN (x less than or equal to 0.5) films are grown at a substrate temperat ure lower than 600 degreesC. From the X-ray. luminescence, absorption and p honon structure analyses, we conclude that Al1-xInxN has a phase separation in the small x region and has a trap level at 1.66 eV which originates fro m the electronic structure of InN.