Citation
G. Vaschenko et al., Pressure dependence of piezoelectric field in InGaN/GaN quantum wells, PHYS ST S-B, 228(1), 2001, pp. 73-76
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972
→ ACNP
Volume
228
Issue
1
Year of publication
2001
Pages
73 - 76
Database
ISI
SICI code
0370-1972(200111)228:1<73:PDOPFI>2.0.ZU;2-6
Abstract
In this work we use the well width dependence of the quantum confined Stark
effect to determine the variation of the built-in piezoelectric field in I
nGaN/GaN quantum wells with applied hydrostatic pressure. We find that the
field increases from 1.4 MV/cm at atmospheric pressure to 2.6 MV/cm at 8.7
GPa. An analysis of the strain generated by the pressure suggests that the
increase in the field is due to a dramatic dependence of the piezoelectric
constants of GaN and InGaN on strain.