Piezoelectric field-induced quantum-confined Stark effect in InGaN/GaN multiple quantum wells

Citation
Cy. Lai et al., Piezoelectric field-induced quantum-confined Stark effect in InGaN/GaN multiple quantum wells, PHYS ST S-B, 228(1), 2001, pp. 77-80
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
228
Issue
1
Year of publication
2001
Pages
77 - 80
Database
ISI
SICI code
0370-1972(200111)228:1<77:PFQSEI>2.0.ZU;2-N
Abstract
In this paper, we present an experimental evidence for the piezoelectric fi eld-induced quantum-confined Stark effect (QCSE) on InGaN/GaN quantum wells . The optical transitions of In0.23Ga0.77N/GaN p-i-n MQWs were studied by u sing modulation spectroscopy (electrotransmission ET) at room temperature. Quantum-well-related signals are well resolved in our ET spectra. Clear ene rgy blue shifts in accordance with increasing reversed bias are observed in the ET spectra. The energy blue shift is attributed to the QCSE. The stren gth of piezoelectric field is found to be 1.9 MV/cm. We also show experimen tally how the piezoelectric field affects the energy shift in the strained MQWs.