Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences

In this work we report results of direct comparison of two sets of InGaN/Ga N MQW structures grown with and without using of thermocycling (TC) by elec troluminescence, photoluminescence and photoluminescence excitation study. For both sets of structures luminescence originates from localized centres, but the density of states differs for structures grown with and without TC . Light emitting diodes (LED) grown with use of TC show nearly two times hi gher efficiency than the structures with the same design grown without TC.