Phonon and photon emission from optically excited InGaN/GaN multiple quantum wells

Authors
Akimov, AV Cavill, SA Kent, AJ Stanton, NM Wang, T Sakai, S
Citation
Av. Akimov et al., Phonon and photon emission from optically excited InGaN/GaN multiple quantum wells, PHYS ST S-B, 228(1), 2001, pp. 107-110
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
228
Issue
1
Year of publication
2001
Pages
107 - 110
Database
ISI
SICI code
0370-1972(200111)228:1<107:PAPEFO>2.0.ZU;2-G
Abstract
The effect of the well width on both the photoluminescence (PL) and phonon emission in InGaN multiple quantum well (MQW) samples has been investigated , For narrow MQW samples (w = 1.25. 2.5 nm) the low temperature PL quantum efficiency is close to unity with the phonon emission being due mainly to c arrier relaxation in the QWs. For wider MQWs the PL quantum efficiency is r educed and the intensity of the phonon emission increases. We explain this in terms of non-radiative recombination processes in the QWs which result i n phonon emission.