Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wellsand quantum boxes

Citation
Me. White et al., Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wellsand quantum boxes, PHYS ST S-B, 228(1), 2001, pp. 129-132
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
228
Issue
1
Year of publication
2001
Pages
129 - 132
Database
ISI
SICI code
0370-1972(200111)228:1<129:PESOMG>2.0.ZU;2-H
Abstract
Photoluminescence excitation (PLE) spectroscopy was carried out to investig ate the excitation/emission cycle of MBE grown InGaN quantum structures. Qu antum well and Stranski-Krastanov type quantum box samples were chosen that emit from blue to red. The bandgap energy (E-g), determined from the PLE s pectrum, was found to decrease concurrently with the detection energy. This indicates that the emission spectrum from the sample is inhomogeneously br oadened. A plot of the resultant Stokes shift against detection energy show s a linear trend. Our results agree with those from independent measurement s of thermally detected optical absorption (TDOA) in some of the samples. O n comparison with absorption and PLE measurements on MOCVD grown InGaN. a d ifference in the bandgap energies obtained becomes apparent for detection e nergies below approximate to 2.6 eV.