Optical characterization of InGaN/GaN MQW structures without in phase separation

Authors
Monemar, B Paskov, PP Pozina, G Paskova, T Bergman, JP Iwaya, M Nitta, S Amano, H Akasaki, I
Citation
B. Monemar et al., Optical characterization of InGaN/GaN MQW structures without in phase separation, PHYS ST S-B, 228(1), 2001, pp. 157-160
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
228
Issue
1
Year of publication
2001
Pages
157 - 160
Database
ISI
SICI code
0370-1972(200111)228:1<157:OCOIMS>2.0.ZU;2-3
Abstract
Photoluminescence and cathodoluminescence spectroscopies are used to invest igate the properties of the band edge emission of InGaN/(In)GaN multiple qu antum well (MQW) structures which do not show evidence of phase separation in high resolution electron microscopy. The data still show a clear low ene rgy peak in the spectra. about 0.1 eV below the main exciton peak. Possible interpretations of this second peak are discussed.