Uniform array of GaN quantum dots in AlGaN matrix by selective MOCVD growth

We demonstrate GaN quantum dots (QDs) embedded in an AlGaN matrix. using me talorganic chemical vapor selective deposition, on a uniform array of hexag onal pyramids of GaN. The hexagonal pyramids have clear {1 (1) over bar 01} side facets and their radius of curvature at the tops is not larger than 1 0 nm, which indicates that very sharp tops are realized. Intense photolumin escence was observed from GaN QDs at a peak energy of 3.61 eV at room tempe rature.