Self-assembled growth of GaN quantum dots using low-pressure MOCVD

We have demonstrated the self-assembled growth of GaN quantum dots (QDs) on an AlN layer by low-pressure metalorganic chemical vapor deposition. The d ependence of the QD density on the GaN coverage was investigated. The densi ty of QDs increased as the GaN coverage was higher and it reached 6 x 10(8) cm(-2) when the amount of GaN deposited was around 2.5 monolayers (ML). Th e average diameter and height of the QDs were 35 and 1.6 nm, respectively. It was found that the formation of the QDs was also much affected by the gr owth temperature.